Package systems and manufacturing methods thereof

ABSTRACT

A method of forming a package system includes providing a first substrate having a metallic pad and at least one metallic guard ring. The method further includes bonding the metallic pad of the first substrate with a semiconductor pad of a second substrate, wherein the at least one metallic guard ring is configured to at least partially interact with the semiconductor pad to form at least a first portion of an electrical bonding material between the first and second substrates.

PRIORITY CLAIM

The present application is a divisional of U.S. application Ser. No. 13/035,607, filed Feb. 25, 2011, which is a continuation-in-part of U.S. application Ser. No. 12/900,718, filed Oct. 8, 2010, both of which are hereby incorporated by reference in their entireties.

TECHNICAL FIELD

The present disclosure relates generally to the field of semiconductor package systems and more, particularly, to package systems and manufacturing methods thereof.

BACKGROUND OF THE DISCLOSURE

Micro electro mechanical system (MEMS) devices are a recent development in the field of integrated circuit technology and include devices fabricated using semiconductor technology to form mechanical and electrical features. Examples of MEMS devices include gears, levers, valves, and hinges. Common applications of MEMS devices include accelerometers, pressure sensors, actuators, mirrors, heaters, and printer nozzles.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the numbers and dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic cross-sectional view of an exemplary package system.

FIG. 2 is a flowchart of an exemplary method of forming a plurality of package systems.

FIGS. 3A-3F are schematic cross-sectional views of package systems during various fabrication stages.

FIGS. 4A-4D and 5 are schematic cross-sectional views of various exemplary package systems.

DETAILED DESCRIPTION OF THE DISCLOSURE

A eutectic bonding has been applied to electrically couple two substrates together to form a MEMS device. Generally, the substrates each have a bonding material formed thereon. For example, an aluminum-germanium (Al—Ge) eutectic bonding is formed by eutectic bonding an Al pad on a substrate with a Ge pad on another substrate. During the eutectic bonding, the Al pad is subjected to a thermal treatment and a pressure, such that the Al pad is softened and melted. The pressure of the eutectic bonding presses the material of the Al pad stretching laterally. It is found that the laterally-stretching Al material may contact and be electrically short to neighboring eutectic bonding material.

It is understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Moreover, the formation of a feature on, connected to, and/or coupled to another feature in the present disclosure that follows may include embodiments in which the features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the features, such that the features may not be in direct contact. In addition, spatially relative terms, for example, “lower,” “upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top,” “bottom,” etc. as well as derivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) are used for ease of the present disclosure of one features relationship to another feature. The spatially relative terms are intended to cover different orientations of the device including the features.

FIG. 1 is a schematic cross-sectional view of an exemplary package system. In FIG. 1, a package system 100 can include a substrate 101 that can be electrically coupled with a substrate 103. The substrate 103 can include at least one opening, e.g., openings 110 a and 110 b. The package system 100 can include at least one electrical bonding material, e.g., an electrical bonding material 120, disposed between the substrates 101 and 103. A portion, e.g., portions 120 a and 120 b, of the electrical bonding material 120 can be at least partially filled in the openings 110 a and 110 b, respectively.

The substrates 101 and 103 can be assembled to form a hermetic or non-hermetic package system. In some embodiments, the substrates 101 and/or 103 can each be a silicon substrate doped with a P-type or N-type dopant. In other embodiments, the substrates 101 and/or 103 may each alternatively be made of some other suitable elementary semiconductor, such as diamond or germanium; a suitable compound semiconductor, such as silicon carbide, silicon germanium, indium arsenide, or indium phosphide; or a suitable alloy semiconductor, such as silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide. Further, the substrates 101 and/or 103 could each include an epitaxial layer (epi layer), may be strained for performance enhancement, and may include a silicon-on-insulator (SOI) structure.

In some embodiments, the substrate 101 can include an integrated circuit (not shown) formed thereon. The integrated circuit can be formed, for example, by a complementary metal-oxide-semiconductor (CMOS) technology. The integrated circuit can include, for example but is not limited to, a logic circuit, an analog circuit, a mixed-signal circuit, and/or any suitable integrated circuit. In some embodiments, the substrate 101 can be referred to as a base substrate.

In some embodiments, the substrate 103 can include another integrated circuit (not shown) formed thereon. The integrated circuit can be similar to that of the substrate 101. In other embodiments, the substrate 103 can include a MEMS device (not shown). The MEMS device can include, for example, an accelerometer, a gyroscope, a mirror for optical applications, a switch or a resonator within a radio frequency (RF) device, a rotational flexure, a translational flexure, and/or any suitable MEMS device. In still other embodiments, the integrated circuit on the substrate 103 may merely include a conductive wire routing for an electrical connection. In some embodiments, the substrate 103 can be referred to as a cap substrate.

In some embodiments, the openings 110 a and 110 b can continuously extend in the substrate 103, such that the openings 110 a and 110 b can meet each other. In other embodiments, the openings 110 a and 110 b can be discontinuously disposed in the substrate 103. In still other embodiments, the openings 110 a and 110 b can be trench openings. The openings 110 a and 110 b do not penetrate all the way through the substrate 103. In some embodiments, the openings 110 a and 110 b can each have a depth ranging from about 2 μm to about 10 μm. The openings 110 a and 110 b can each have a width ranging from about 1 μm to about 2 μm. It is noted that the dimensions of the openings 110 a and 110 b are merely exemplary. The dimensions can be modified.

In some embodiments, the electrical bonding material 120 can be a eutectic bonding material, glass bonding material, solder bonding material, or any suitable bonding material. In some embodiment using a eutectic bonding, the electrical bonding material 120 can include at least one material, such as aluminum (Al), copper (Cu), silicon (Si), germanium (Ge), titanium (Ti), tantalum (Ta), gold (Au), nickel (Ni), tin (Sn), other suitable bonding materials, and/or any combinations thereof. In other embodiments, the electrical bonding material 120 can include a metallic material 130 and a semiconductor material 140. The metallic material 130 can be made of, e.g., Al, Cu, Ti, Ta, Au, Ni, Sn, other metallic materials, and/or any combinations. The semiconductor material 140 can be made of, e.g., Ge, Si, other semiconductor material, and/or any combinations thereof. The eutectic bonding between the substrates 101 and 103 can be formed by interacting the metallic material 130 and the semiconductor material 140.

During a eutectic bonding, the metallic material 130 can be softened and/or melted. The openings 110 a and 110 b are configured to at least partially accommodate the softened metallic material 130. In some embodiments, the softened metallic material 130 can completely fill the openings 110 a and 110 b as shown in FIG. 1. In other embodiments, the softened metallic material 130 may partially fill the openings 110 a and 110 b. It is noted that the number of the openings 110 a and 110 b is merely exemplary. In some embodiments, more openings can be disposed in the substrate 103 for accommodating the metallic material 130.

In some embodiments, the semiconductor material 140 can optionally include a pad 140 a and at least one guard ring, e.g., a guard ring 140 b. The guard ring 140 b can be disposed around the pad 140 a. The guard ring 140 b can be continuously or discontinuously disposed around the pad 140 a. In some embodiments, the guard ring 140 b can provide more semiconductor materials to interact with the metallic material 130 that is softened and melted during the eutectic bonding. Though merely showing a single guard ring 140 b in FIG. 1, the scope of this application is not limited thereto. In some embodiments, more than one guard ring can be disposed around the pad 140 a. In other embodiments, the guard ring 140 b can be saved.

Referring again to FIG. 1, in some embodiments, a gap 160 is formed between the pad 140 a and the guard ring 140 b. In some embodiments, the opening 110 a can face at least one of the pad 140 a and the gap 160. In some embodiments, the gap 160 can have a width of about 3 μm. In other embodiments, the width of the gap 160 can be more or less than 3 μm.

In some embodiments, the substrate 101 can optionally include at least one opening, e.g., openings 150 a and 150 b. The openings 150 a and 150 b can be configured to at least partially accommodate a portion, e.g., portions 120 c and 120 d, respectively, of the electrical bonding material 120. In some embodiments, the openings 150 a and 150 b can continuously extend in the substrate 101, such that the openings 150 a and 150 b can meet each other. In other embodiments, the openings 150 a and 150 b can be discontinuously disposed in the substrate 101. In still other embodiments, the openings 150 a and 150 b can be trench openings. The openings 150 a and 150 b do not penetrate all the way through the substrate 101. In yet still other embodiments, the openings 110 a and 150 a are misaligned from each other in a direction that is perpendicular to surfaces of the substrates 101 and 103. In some embodiments, the openings 150 a and 150 b can each have a depth ranging from about 2 μm to about 10 μm. The openings 150 a and 150 b can each have a width ranging from about 1 μm to about 2 μm. It is noted that the dimensions of the openings 150 a and 150 b are merely exemplary. The dimensions can be modified.

During the eutectic bonding, the metallic material 130 can be softened and/or melted. The openings 150 a and 150 b are configured to at least partially accommodate the softened metallic material 130. In some embodiments, the softened metallic material 130 can completely fill the openings 150 a and 150 b as shown in FIG. 1. In other embodiments, the softened metallic material 130 may partially fill the openings 150 a and 150 b. It is noted that the number of the openings 150 a and 150 b is merely exemplary. In some embodiments, more openings can be disposed in the substrate 101 for accommodating the metallic material 130.

It is noted that though showing the openings 150 a and 150 b disposed around the pad 140 a and the guard ring 140 b, the scope of the current application is not limited thereto. In some embodiments, the openings 150 a and 150 b can be disposed around the pad 140 a, and the guard ring 140 b is not used. In other embodiments, the openings 150 a and 150 b can be disposed between the pad 140 a and the guard ring 140 b.

FIG. 2 is a flowchart of an exemplary method of forming a plurality of package systems. FIGS. 3A-3F are schematic cross-sectional views of package systems during various fabrication stages. Items of FIGS. 3A-3F that are the same or similar items in FIG. 1 are indicated by the same reference numerals, increased by 200. It is understood that FIGS. 3A-3F have been simplified for a better understanding of the concepts of the present disclosure. Accordingly, it should be noted that additional processes may be provided before, during, and after the method 200 of FIG. 2, and that some other processes may only be briefly described herein.

Referring to FIGS. 2 and 3A, the process shown in block 210 can include providing a substrate, e.g., a substrate 301. In some embodiments, pads 340 a and guard rings 340 b can be patterned on the substrate 301. The pads 340 a and guard rings 340 b can be formed, for example, by physical vapor deposition (PVD) and/or chemical vapor deposition (CVD), a photolithographic process, and an etch process.

In some embodiments, openings 350 a and 350 b can be optionally formed in the substrate 301 as shown in FIG. 3B. The openings 350 a and 350 b can be formed, for example, by a photolithographic process, and an etch process. In some embodiments, the openings 350 a and 350 b are formed and meet each other in the substrate 301. In some embodiments, the openings 350 a and 350 b are formed around the pad 340 a and the guard ring 340. In other embodiments, the openings 350 a and 350 b can be each formed between the pad 340 a and the guard ring 340 b. In still other embodiments, the openings 350 a and 350 b can be formed around the pad 340 a and the guard ring 340 b is not used.

Referring to FIG. 3C, metallic pads 331 can be patterned over a substrate 301. The metallic pads 331 can have a material similar to that of the metallic material 130 described above in conjunction with FIG. 1. The metallic pads 331 can be formed, for example, by physical vapor deposition (PVD) or chemical vapor deposition (CVD), a photolithographic process, and an etch process.

Referring to FIG. 3D, openings 310 a and 310 b can be formed in the substrate 301. The openings 310 a and 310 b can be formed, for example, by a photolithographic process, and an etch process. In some embodiments, a width W₁ of the substrate 303 a below the metallic pad 331 can be larger than a width W₂ of the metallic pad 331.

Referring to FIG. 3E, the substrate 303 can be flipped and contact the substrate 301. The metallic pads 331 can be aligned with the respective pads 340 a. Referring to FIGS. 2 and 3F, the process shown in block 220 can include bonding the substrate 301 and 303 through at least one electrical bonding material, e.g., an electrical bonding material 320, between the substrate 301 and 303. The bonding process 370 can push a portion of the electrical bonding material 320 at least partially filling in the openings 310 a and 310 b.

As noted, the bonding process 370 can react the metallic pads 331 with the pads 340 a to form electrical bonding, e.g., eutectic bonding. The bonding process 370 can have a process temperature that can soften and/or melt the metallic bonds 331 (shown in FIG. 3E). The bonding process 370 can also press the substrate 303 to the substrate 301. The softened and non-reacted metallic material of the metallic bonds 331 can be at least partially pushed and/or squeezed into the openings 310 a and 310 b.

It is found that, without the openings 310 a and 310 b, the non-reacted metallic material of the metallic bonds 331 may contact other non-reacted metallic material of neighboring metallic bonds (not labeled). The metallic materials would be electrically short to each other.

In some embodiments, the optionally-formed guard rings 340 b can interact with a portion of the metallic material of the metallic bonds 331. The guard rings 340 b can consume and further prevent the non-reacted metallic material of the metallic bonds 331 from contacting other non-reacted metallic materials.

In some embodiments, the optionally-formed openings 350 a and 350 b can accommodate another portion of the non-reacted metallic material of the metallic bonds 331. The openings 350 a and 350 b can further prevent the non-reacted metallic material of the metallic bonds 331 from contacting other non-reacted metallic materials.

In some embodiments, the method 200 can include at least one process for grinding and thinning the substrates 301 and 303. The grinding process does not grind the substrate 301 and 303, such that the openings 310 a-310 b and 350 a-350 b penetrate all the way through the substrates 303 and 301, respectively. In some embodiments, after the grinding process, the package structure shown in FIG. 3F can be subjected to a dicing process to individualize the package systems.

FIG. 4A is a schematic cross-sectional view of another exemplary package system. Items of FIG. 4A that are the same or similar items in FIG. 1 are indicated by the same reference numerals, increased by 300. In FIG. 4A, a package system 400 can include a substrate 401 that can be electrically coupled with a substrate 403. The package system 400 can include at least one electrical bonding material, e.g., an electrical bonding material 420, disposed between the substrates 401 and 403.

In some embodiments, the electrical bonding material 420 can be a eutectic bonding material, glass bonding material, solder bonding material, or any suitable bonding material. In some embodiment using a eutectic bonding, the electrical bonding material 420 can include a metallic material 430 and a semiconductor material 440. The metallic material 430 can be disposed adjacent to a surface 403 a of the substrate 403. The semiconductor material 440 can be disposed adjacent to a surface 401 a of the substrate 401.

Referring to FIG. 4A, the metallic material 430 can include at least one pad, for example, a pad 430 a, and at least one guard ring, a guard ring 430 b that is disposed around the pad 430 a. In some embodiments, the pad 440 a can be wider than the pad 430 a as shown in FIG. 4A. In other embodiments, the pad 430 a can be wider than the pad 440 a as shown in FIG. 4C. In still other embodiments, the width of the pad 430 a can be substantially equal to that of the pad 440 a.

In some embodiments, the guard ring 430 b can be continuously or discontinuously disposed around the pad 430 a. Though merely showing a single guard ring 430 b in FIG. 4A, the scope of this application is not limited thereto. In some embodiments, more than one guard ring can be disposed around the pad 430 a.

During a eutectic bonding, the metallic material 430 can be softened and/or melted. The pad 430 a can be eutectic bonded with a pad 440 a of the semiconductor material 440. In some embodiments, the electrical bonding material 420 carrying the component, e.g., germanium, of the semiconductor material 440 may laterally flow and adjoin the guard ring 430 b. The guard ring 430 b can be configured to interact with the carried germanium component in the electrical bonding material 420 and/or prevent the electrical bonding material 420 from further lateral flowing.

In some embodiments, the substrate 403 can include at least one opening through the surface 403 a. For example, openings 410 a and 410 b can be through the surface 403 a and disposed between the pad 430 a and the guard ring 430 b as shown in FIG. 4B. In other embodiments, the openings 410 a and 410 b can be through the surface 403 a and around the pad 430 a and the guard ring 430 b.

As noted, the openings 410 a and 410 b are configured to at least partially accommodate the softened metallic material 430 during the eutectic bonding. In some embodiments, the softened metallic material 430 may not flow into the openings 410 a and 410 b as shown in FIG. 4B. In other embodiments, the softened metallic material 430 may completely fill the openings 410 a and 410 b as shown in FIG. 4D. The metallic materials of the pad 430 a and the guard ring 430 b may adjoin each other. In still other embodiments, the softened metallic material 430 may partially fill the openings 410 a and 410 b (not shown). It is noted that the number of the openings 410 a and 410 b described above is merely exemplary. In some embodiments, more openings can be formed in the substrate 403 for accommodating the metallic material 430.

In some embodiments, the openings 410 a and 410 b can continuously extend into the surface 403 a of the substrate 403, such that the openings 410 a and 410 b can meet each other. In other embodiments, the openings 410 a and 410 b can be discontinuously disposed in the substrate 403. In still other embodiments, the openings 410 a and 410 b can be trench openings. In some embodiments, the openings 410 a and 410 b do not penetrate all the way through the substrate 403. In some embodiments, the openings 410 a and 410 b can each have a depth ranging from about 2 μm to about 10 μm. The openings 410 a and 410 b can each have a width ranging from about 1 μm to about 2 μm. It is noted that the dimensions of the openings 410 a and 410 b are merely exemplary. The dimensions can be modified.

In some embodiments, the semiconductor material can optionally include at least one semiconductor guard ring that is disposed around the semiconductor pad. For example, at least one guard ring, e.g., a guard ring 540 b can be disposed around the pad 540 a as shown in FIG. 5. Items of FIG. 5 that are the same or similar items in FIG. 1 are indicated by the same reference numerals, increased by 400. In FIG. 5, a package system 500 can include a substrate 501 that can be electrically coupled with a substrate 503. In some embodiments, a gap 560 can be between the pad 540 a and the guard ring 540 b.

In some embodiments, the guard ring 540 b can be continuously or discontinuously disposed around the pad 540 a. In some embodiments, the guard ring 540 b can provide more semiconductor materials to interact with the metallic material 530 that is softened and/or melted during the eutectic bonding. Though merely showing a single guard ring 540 b in FIG. 5, the scope of this application is not limited thereto. In some embodiments, more than one guard ring can be disposed around the pad 540 a.

In some embodiments, the substrate 501 can optionally include at least one opening, e.g., openings 550 a and 550 b through a surface 501 a. The openings 550 a and 550 b can be configured to at least partially accommodate a portion, e.g., portions 520 c and 520 d, respectively, of the electrical bonding material 520. In some embodiments, the openings 550 a and 550 b can continuously extend into the surface 501 a of the substrate 501, such that the openings 550 a and 550 b can meet each other. In other embodiments, the openings 550 a and 550 b can be discontinuously disposed into the surface 501 a of the substrate 501. In still other embodiments, the openings 550 a and 550 b can be trench openings. In some embodiments, the openings 550 a and 550 b do not penetrate all the way through the substrate 501. In other embodiments, the openings 510 a and 550 a are misaligned from each other in a direction that is perpendicular to surfaces of the substrates 501 and 503. In some embodiments, the openings 550 a and 550 b can each have a depth ranging from about 2 μm to about 10 μm. The openings 550 a and 550 b can each have a width ranging from about 1 μm to about 2 μm. It is noted that the dimensions of the openings 550 a and 550 b are merely exemplary. The dimensions can be modified.

During the eutectic bonding, the metallic material 530 can be softened and/or melted. The openings 550 a and 550 b are configured to at least partially accommodate the softened metallic material 530. In some embodiments, the softened metallic material 530 can completely fill the openings 550 a and 550 b as shown in FIG. 5. In other embodiments, the softened metallic material 530 may partially fill the openings 550 a and 550 b. It is noted that the number of the openings 550 a and 550 b is merely exemplary. In some embodiments, more openings can be disposed in the substrate 501 for accommodating the metallic material 530.

It is noted that though showing the openings 550 a and 550 b disposed around the pad 540 a and the guard ring 540 b, the scope of the current application is not limited thereto. In some embodiments, the openings 550 a and 550 b can be disposed around the pad 540 a, and the guard ring 540 b is saved. In other embodiments, the openings 550 a and 550 b can be disposed between the pad 540 a and the guard ring 540 b.

It is noted that the package systems 400 and 500 described above in conjunction with FIGS. 4A-4D and 6 can be formed by methods or modification that are as same as or similar to the methods described above in conjunction with FIGS. 2 and 3A-3F. The detail description is not repeated.

One aspect of this description relates to a method of forming a package system. The method includes providing a first substrate having a metallic pad and at least one metallic guard ring. The method further includes bonding the metallic pad of the first substrate with a semiconductor pad of a second substrate, wherein the at least one metallic guard ring is configured to at least partially interact with the semiconductor pad to form at least a first portion of an electrical bonding material between the first and second substrates.

Another aspect of this description relates to a metal of forming a package system. The method includes forming a metallic pad on a first substrate, and forming a metallic guard ring on the first substrate around the metallic pad. The method includes forming an opening in the first substrate around the metallic pad. The method further includes bonding the metallic pad and the metallic guard ring to a semiconductor material of a second substrate, wherein the bonding process comprises forming a eutectic bonding material between the first substrate and the second substrate, the eutectic bonding material includes the metallic pad and the metallic guard ring.

Still another aspect of this description relates to a metal of forming a package system. The method includes forming a plurality of first metallic pads on a first substrate. The method further includes forming a plurality of a metallic guard rings on the first substrate, wherein each metallic guard ring of the plurality of metallic guard ring is around a corresponding first metallic pad of the plurality of first metallic pads. The method further includes forming a plurality of first openings in the first substrate, wherein each first opening of the plurality of first openings is around the corresponding first metallic pad of the plurality of first metallic pads. The method further includes forming a plurality of second metallic pads on the second substrate. The method further includes bonding each first metallic pad of the plurality of first metallic pad to a respective second metallic pad of the plurality of second metallic pads.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A method of forming a package system, the method comprising: providing a first substrate having a metallic pad and at least one metallic guard ring, wherein the metallic pad protrudes above a top surface of the first substrate; and bonding the metallic pad of the first substrate with a semiconductor pad of a second substrate, wherein the at least one metallic guard ring is configured to at least partially interact with the semiconductor pad to form at least a first portion of an electrical bonding material between the first and second substrates.
 2. The method of claim 1, wherein the bonding process includes a eutectic bonding process.
 3. The method of claim 1, wherein the first substrate includes at least one opening that is disposed between the metallic pad and the at least one metallic guard ring, and the bonding process pushes at least a portion of the electrical bonding material at least partially filling in the at least one opening.
 4. The method of claim 3, wherein the bonding process comprises completely filling each opening of the at least one opening.
 5. The method of claim 1, wherein the second substrate includes at least one semiconductor guard ring that is disposed around the semiconductor pad and the at least one semiconductor guard ring is configured to at least partially interact with at least one of the metallic pad and the at least one metallic guard ring to form at least a second portion of the electrical bonding material.
 6. The method of claim 1, wherein bonding the metallic pad of the first substrate with the semiconductor pad of the second substrate comprises forming a non-hermetic package.
 7. The method of claim 1, wherein providing the first substrate comprises: depositing a first metal layer on the first substrate; patterning the first metal layer to form the metallic pad; depositing a second metal layer on the first substrate; and patterning the second metal layer to form the at least one metallic guard ring.
 8. The method of claim 7, wherein depositing the first metal layer comprises depositing the first metal layer using chemical vapor deposition (CVD) or physical vapor deposition (PVD), and depositing the second metal layer comprises depositing the second metal layer using CVD or PVD.
 9. The method of claim 7, wherein patterning the first metal layer comprises etching the first metal layer, and patterning the second metal layer comprises etching the second metal layer.
 10. A metal of forming a package system, the method comprising: forming a metallic pad on a first substrate; forming a metallic guard ring on the first substrate around the metallic pad; forming an opening in the first substrate around the metallic pad; and bonding the metallic pad and the metallic guard ring to a semiconductor material of a second substrate, wherein the bonding process comprises forming a eutectic bonding material between the first substrate and the second substrate, the eutectic bonding material includes the metallic pad and the metallic guard ring.
 11. The method of claim 10, wherein forming the opening comprises etching the first substrate.
 12. The method of claim 10, wherein forming the opening comprises: forming a first opening in the first substrate; and forming a second opening in the first substrate, wherein the first opening is connected to the second opening.
 13. The method of claim 10, further comprising forming a second opening in the second substrate, wherein the second opening is closer to a center of the package system then the opening in the first substrate.
 14. The method of claim 10, wherein the bonding process comprises at least partially filling the opening with the eutectic bonding material.
 15. The method of claim 10, wherein the bonding process comprises forming a hermetic package system.
 16. A method of forming a package system, the method comprising: forming a plurality of first metallic pads on a first substrate; forming a plurality of metallic guard rings on the first substrate, wherein each metallic guard ring of the plurality of metallic guard ring is around a corresponding first metallic pad of the plurality of first metallic pads; forming a plurality of first openings in the first substrate, wherein each first opening of the plurality of first openings is around the corresponding first metallic pad of the plurality of first metallic pads; forming a plurality of semiconductor pads on a second substrate; and bonding each first metallic pad of the plurality of first metallic pad to a respective semiconductor pad of the plurality of semiconductor pads.
 17. The method of claim 16, further comprising dicing the packaged system, wherein dicing the packaged system comprises sawing the packaged system between adjacent openings of the plurality of openings.
 18. The method of claim 16, further comprising forming a plurality of second openings, wherein each second opening of the plurality of second openings is around a corresponding semiconductor pad of the plurality of semiconductor pads.
 19. The method of claim 16, wherein the bonding process comprises at least partially filling each first opening of the plurality of first openings.
 20. The method of claim 16, wherein the bonding process comprises reacting each semiconductor pad of the plurality of semiconductor pads with a respective first metallic pad of the plurality of first metallic pads. 